Anomalous Hall effect in anatase Ti1-xCoxO2 at low temperature regime

Kazunori Ueno,Tomoteru Fukumura,Hidemi Toyosaki,Masaki Nakano,Masashi Kawasaki

DOI: https://doi.org/10.1063/1.2834247

2007-02-14

Abstract:Anomalous Hall effect (AHE) of a ferromagnetic semiconductor anatase \cotio thin film is studied from 10K to 300K. Magnetic field dependence of anomalous Hall resistance is coincident with that of magnetization, while the anomalous Hall resistance decreases at low temperature in spite of nearly temperature-independent magnetization. Anomalous Hall conductivity sigma_AHE is found to be proportional to the square of Hall mobility, suggesting that charge scattering strongly affects the AHE in this system. The anatase Ti1-xCoxO2 also follows a scaling relationship to conductivity sigma_xx as sigma_AHE ~ sigma_xx^1.6, which was observed for another polymorph rutile Ti1-xCoxO2, suggesting an identical mechanism of their AHE.

Materials Science,Strongly Correlated Electrons

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to study the relationship between the anomalous Hall effect (AHE), electrical transport properties and magnetization in anatase - type \( \text{Ti}_{1 - x}\text{Co}_x\text{O}_{2-\delta} \) thin films under low - temperature conditions. Specifically, the authors focus on the following points:

1. **Magnetic - field - dependence of the anomalous Hall effect**: The variation of the anomalous Hall resistivity \( \rho_{\text{AHE}} \) with the magnetic field \( H \) at different temperatures was studied and compared with the magnetization \( M \).

2. **Effect of temperature on the anomalous Hall effect**: The phenomenon that, in the low - temperature range, although the magnetization \( M \) hardly changes with temperature, the anomalous Hall resistivity \( \rho_{\text{AHE}} \) decreases significantly was explored.

3. **Relationship between the anomalous Hall conductivity and mobility**: The relationship between the anomalous Hall conductivity \( \sigma_{\text{AHE}} \) and the Hall mobility \( \mu_H \) was analyzed. It was found that \( \sigma_{\text{AHE}}\propto\mu_H^2 \), indicating that charge scattering plays an important role in the anomalous Hall effect.

4. **Comparison with rutile - phase \( \text{Ti}_{1 - x}\text{Co}_x\text{O}_{2-\delta} \)**: By comparing the relationships between the anomalous Hall conductivity \( \sigma_{\text{AHE}} \) and the conductivity \( \sigma_{xx} \) of anatase - type and rutile - type \( \text{Ti}_{1 - x}\text{Co}_x\text{O}_{2-\delta} \), it was found that both follow the same scaling relationship \( \sigma_{\text{AHE}}\propto\sigma_{xx}^{1.6} \), which indicates that although their electrical transport mechanisms are different, there are similarities in terms of the anomalous Hall effect.

In summary, this paper aims to gain an in - depth understanding of the anomalous Hall effect in anatase - type \( \text{Ti}_{1 - x}\text{Co}_x\text{O}_{2-\delta} \) and its relationship with electrical transport properties and magnetization, providing a theoretical basis for future spintronics device design.