Trapping electrons in electrostatic traps over the surface of helium

E. Rousseau,Y. Mukharsky,D. Ponarine,O. Avenel,E. Varoquaux
DOI: https://doi.org/10.1007/s10909-007-9368-z
2006-11-30
Abstract:We have observed trapping of electrons in an electrostatic trap formed over the surface of liquid helium-4. These electrons are detected by a Single Electron Transistor located at the centre of the trap. We can trap any desired number of electrons between 1 and $\sim 30$. By repeatedly ($\sim 10^3-10^4$ times) putting a single electron into the trap and lowering the electrostatic barrier of the trap, we can measure the effective temperature of the electron and the time of its thermalisation after heating up by incoherent radiation.
Mesoscale and Nanoscale Physics
What problem does this paper attempt to address?
The problem that this paper attempts to solve is: **How to trap a single electron on the surface of liquid helium by an electric field, and measure its thermalization time and temperature, in order to evaluate its potential application as a qubit (quantum bit)**. ### Specific problems and research objectives: 1. **Trapping a single electron**: - The researchers designed an experimental device that can trap one or more electrons on the surface of liquid helium (\( \text{He}_4 \)) by an electric field. These electrons are trapped in a potential well formed by electrodes. - By adjusting the electrode voltage, the number of trapped electrons can be controlled, ranging from 1 to about 30. 2. **Measuring the thermalization time of electrons**: - The researchers measured the effective temperature and thermalization time of electrons by repeatedly putting a single electron into the potential well and reducing the height of the potential barrier. - These measurements are crucial for understanding the interaction between electrons and the environment, especially when considering their application as qubits. 3. **Evaluating the potential of electrons as qubits**: - In 1999, Platzman and Dykman proposed that a single electron trapped on the surface of liquid helium by an electric field can be used as a qubit, thus becoming the basis for building a quantum computer. - This study experimentally verified this idea, especially by measuring the upper limit of the relaxation time of electrons to evaluate their practicality as potential qubits. ### Overview of experimental methods: - **Experimental device**: - Use a set of electrode systems to form a potential well on the surface of liquid helium. - Place a single - electron transistor (SET) below the potential well to monitor the state of electrons. - A liquid helium film covers the structure, with a thickness of about 200 - 400 Å. - **Operating steps**: 1. Generate electrons on the surface of liquid helium by corona discharge. 2. Cool the system to about 1 K and trap the desired number of electrons by adjusting the electrode voltage. 3. Observe the behavior of electrons, such as the process of entering and leaving the potential well, by changing the electrode voltage. - **Measurement results**: - Measured the escape probability, temperature change, and thermalization time of electrons. - The results show that the temperature of electrons changes under different conditions, and its thermalization time is very short, which may be due to strong coupling with the environment. ### Conclusion: This study provides important experimental data for understanding and developing qubits based on electrons trapped on the surface of liquid helium. Through detailed measurements of electron behavior, researchers can evaluate the feasibility and potential applications of such systems.