G. León,C. Berthod,T. Giamarchi
Abstract:We investigate the Hall effect in a quasi one-dimensional system made of weakly coupled Luttinger Liquids at half filling. Using a memory function approach, we compute the Hall coefficient as a function of temperature and frequency in the presence of umklapp scattering. We find a power-law correction to the free-fermion value (band value), with an exponent depending on the Luttinger parameter $K_{\rho}$. At high enough temperature or frequency the Hall coefficient approaches the band value.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to study the behavior of the Hall effect in strongly - correlated low - dimensional systems, especially in quasi - one - dimensional (quasi - 1D) systems. Specifically, the author focuses on the variation of the Hall coefficient with temperature and frequency in a half - filled quasi - one - dimensional system composed of weakly - coupled Luttinger liquids in the presence of Umklapp scattering.
### Research Background
1. **Classical Hall Effect**: In a classical Fermi system, the Hall coefficient is a very stable property, mainly depending on the shape of the Fermi surface and the sign of carriers, and is not affected by interactions.
2. **Strong - Correlation Effect**: When a material exhibits strong - correlation effects, the traditional Fermi - liquid theory may no longer be applicable, causing the Hall effect to deviate from the classical behavior. Such phenomena are particularly significant in low - dimensional systems, especially in one - dimensional systems, where the Luttinger - liquid theory replaces the Fermi - liquid theory.
3. **Experimental Challenges**: Although there have been some Hall - effect measurements on quasi - one - dimensional materials such as organic conductors, these results are difficult to interpret due to the lack of theoretical understanding of such problems.
### Core Problems of the Paper
By introducing the memory function approach, the author calculated the variation of the Hall coefficient with temperature and frequency in the presence of Umklapp scattering. They found that:
- There is a power - law correction to the Hall coefficient relative to the free - fermion value (band value), and the correction index depends on the Luttinger parameter \(K_{\rho}\).
- At a sufficiently high temperature or frequency, the Hall coefficient approaches the free - fermion value.
### Formula Summary
1. **Correction Formula for the Hall Coefficient**:
\[
R_{H}=R_{H}^{0}\left[1 + A\left(\frac{g_{3}}{\pi v_{F}}\right)^{2}\left(\frac{T}{W}\right)^{3K_{\rho}- 3}\right]
\]
where \(R_{H}^{0}=\frac{\pi\alpha a_{y}}{e v_{F}}\) is the Hall coefficient without Umklapp scattering, \(W\) is the electron bandwidth, \(g_{3}\) is the Umklapp scattering intensity, \(v_{F}\) is the Fermi velocity, \(\alpha\) is the band - curvature parameter, \(a_{y}\) is the inter - chain spacing, and \(T\) is the temperature.
2. **Hall Coefficient in the High - Temperature/High - Frequency Limit**:
\[
R_{H}(\infty)=R_{H}^{0}
\]
3. **Correction in the Non - interacting Limit**:
\[
R_{H}=R_{H}^{0}\left[1+\frac{1}{8}\left(\frac{g_{3}}{\pi v_{F}}\right)^{2}\log\left(\frac{T}{W}\right)\right]
\]
### Conclusion
This paper reveals the influence of Umklapp scattering on the Hall coefficient of a half - filled quasi - one - dimensional system through theoretical calculations, providing a theoretical basis for understanding and interpreting relevant experimental results. In particular, it points out that at low temperatures, due to the existence of the Mott gap or other phase transitions, the Hall coefficient may change significantly, so it is necessary to perform fitting at high temperatures or high frequencies to obtain more accurate results.