J. Seebeck,T.R. Nielsen,P. Gartner,F. Jahnke
Abstract:A microscopic theory for the interaction of carriers with LO phonons is used to study the ultrafast carrier dynamics in nitride-based semiconductor quantum dots. It is shown that the efficiency of scattering processes is directly linked to quasi-particle renormalizations. The electronic states of the interacting system are strongly modified by the combined influence of quantum confinement and polar coupling. Inherent electrostatic fields, typical for InGaN/GaN quantum dots, do not limit the fast scattering channels.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is: in nitride - based quantum dot systems, how does the interaction between carriers and longitudinal - optical phonons (LO phonons) affect the ultrafast carrier dynamics. Specifically, the author focuses on the influence of this interaction on the relaxation process of carriers from the excited state (p - shell) to the ground state (s - shell) of the quantum dot, as well as the scattering efficiency and de - phasing effect in these processes.
### Main problems and background
1. **Importance of carrier - phonon interaction**
- In semiconductor quantum dots (QDs), the interaction between carriers and LO phonons is an important scattering process, which determines the redistribution of carriers between the localized quantum dot states and between the quantum dot and the wetting layer (WL) states.
- These interactions also lead to optical de - phasing, which is very important in coherent optical experiments and determines the homogeneous broadening of absorption and gain spectra.
2. **Uniqueness of nitride - based quantum dots**
- Nitride - based quantum dots have broad application prospects in the field of optoelectronics due to their large possible emission frequency range.
- In nitride - based quantum dots, the role of LO phonon interaction is more significant because the polarization coupling strength of this material system is moderate.
3. **Effect of built - in electric field**
- For quantum dots with a hexagonal crystal structure growing along the c - axis, spontaneous and piezoelectric polarizations will lead to a large electrostatic field. These built - in electric fields modify the electronic states through the quantum - confined Stark effect.
### Main objectives of the paper
The main objective of the paper is to determine the efficiency of carrier - phonon interaction under the above conditions. Specifically:
- The author uses a microscopic theory to study the interaction between carriers and LO phonons, especially in the presence of a strong built - in electric field.
- They extend a model based on quantum - kinetic theory, including the process of optically generating carriers by short laser pulses, and describe the coherent - driven inter - band polarization de - phasing at the same quantum - kinetic level.
- The intermediate polarization coupling strength is studied, and the quantum - confined Stark effect of nitride - based quantum dots is described self - consistently.
### Key findings
- **Importance of non - Markovian approximation**: When considering the strong coupling between carriers and phonons, the non - Markovian approximation can capture the oscillation phenomena that occur in the scattering process, which cannot be explained by the Markovian approximation.
- **Ultrafast characteristics of carrier relaxation**: Through quantum - kinetic calculations, the author shows that the relaxation process of carriers from the p - shell to the s - shell is very rapid, and significant redistribution has already occurred even during the optical pulse.
- **Enhancement of scattering efficiency**: In the InGaN material system, the large polarization coupling enhances the scattering efficiency, and the electron and hole charge separation caused by the built - in electric field only reduces the inter - band process, without affecting the intra - band process.
### Conclusion
The paper shows that in nitride - based quantum dot systems, due to the interaction between carriers and LO phonons, the free - particle state is significantly modified. Therefore, the Fermi golden rule is no longer applicable, and a quantum - kinetic description must be used to explain the existence of ultrafast scattering channels. This work emphasizes the importance and necessity in understanding these complex systems.