Energy Transmission across Acoustically Mismatched Solid Junctions

Jian Wang,Jian-Sheng Wang

DOI: https://doi.org/10.48550/arXiv.cond-mat/0509092

2005-09-05

Abstract:We derive expression for energy flux in terms of lattice normal mode coordinates. Energy transmission across solid junctions from lattice dynamic point of view is given and its relation with atomic masses, lattice constants, and group velocities is clarified. A scattering boundary method (SBM) is proposed for calculating the amplitude transmission across solid junctions. The phonon transmission coefficients and thermal conductance are calculated for two kinds of acoustically mismatched junctions: different chirality nanotubes (11,0) to (8,0), and Si-Ge interface structure. Our calculation shows a mode-dependent transmission in nanotube junction due to the high symmetry vibrating motions for nanotube atoms, indicating its possible important role in nanotube mixture thermal conductance. Energy transmission and Kapitza conductance across the Si-Ge interface [001] are calculated for the Si-Ge diamond-type structure. It is shown that the energy transmission across the Si-Ge interface depends on the incident angle and on the interface mode conversion. A critical incident angle about 42 degrees numerically found for waves incident from Ge to Si. Our numerical result of the Kapitza conductance at temperature T=200K is G_K=4.6x10^8 W/(Km^2) We find numerically scaling law G_K proportional to T^{2.87} for [001] interface at low temperature.

Statistical Mechanics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: **the energy transfer problem at acoustically mismatched solid - state interfaces**. Specifically, the author focuses on the situation at the nanoscale where, due to the complexity of material structures and interfaces, traditional heat conduction theories (such as Fourier's law) are no longer applicable. Therefore, researchers need to understand and quantify how energy is transferred between interfaces of different materials, especially between materials with different lattice constants, atomic masses, and group velocities.

### Research Background
With the rapid development of nanomaterial synthesis and processing technologies, people have developed a strong interest in heat transfer phenomena in low - dimensional devices at the nanoscale. Experimental and theoretical studies have shown that phonon transport in nanostructures exhibits some novel characteristics, such as size - dependent anomalous heat conduction in one - dimensional chains and universal quantum thermal conductivity. These phenomena indicate that heat transfer in nanostructures may be different from Fourier's law predicted for bulk materials, which may be due to the existence of many acoustically mismatched interfaces in nanostructures and the fact that the mean free path of phonons is comparable to the structural size.

### Research Objectives
In order to better understand and optimize heat transfer in nanostructures, researchers need to gain in - depth understanding of the energy transfer mechanisms at acoustically mismatched solid - state interfaces. Specifically, the author aims to:
1. **Derive an energy flux formula based on lattice dynamics**, clarifying the relationship between energy transfer and atomic mass, lattice constant, and group velocity.
2. **Propose a Scattering Boundary Method (SBM)**, for calculating the amplitude transfer coefficient at the interface.
3. **Verify the theoretical model through numerical simulation**, and explore the energy transfer characteristics of different types of acoustically mismatched interfaces (such as carbon nanotube junctions and Si - Ge interfaces).

### Main Findings
1. **Energy transfer in carbon nanotube junctions**: The study found that due to the highly symmetric vibration modes of carbon nanotubes, the energy transfer at nanotube junctions exhibits mode - dependence. In particular, the longitudinal acoustic mode (LA) has a relatively high transfer efficiency, while other modes (such as TA and TW) have a relatively low or almost zero transfer efficiency.

2. **Energy transfer at the Si - Ge interface**: For the Si - Ge interface, the author calculated the change of energy transfer with the incident angle and found a critical incident angle of approximately 42°. In addition, the variation law of the Kapitza thermal conductivity with temperature was also studied, and a scaling law of \( G_K \propto T^{2.87} \) was obtained at low temperatures.

Through these studies, the author has provided new theoretical tools and numerical methods for understanding heat transfer in nanostructures, which is of great significance for designing highly efficient thermal management materials and devices.