Abstract:We calculate the effective resistivity of a macroscopically disordered two dimensional conductor consisting of two components in a perpendicular magnetic field. When two components have equal area fractions, we use a duality theorem to show that the magnetoresistance is non-saturating and at high fields varies exactly linearly with magnetic field. At other compositions, an effective medium calculation leads to a saturating magnetoresistance. We briefly discuss possible connections between these results and magnetoresistance measurements on heavily disordered chalconide semiconductors.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is: to explain the anomalously large transverse magnetoresistance (TMR) observed in macroscopically disordered two - dimensional conductors, especially in doped silver sulfides such as Ag₂₊ₓSe and Ag₂₊ₓTe, where the resistivity shows an approximately linear change under a high magnetic field. This linear magnetoresistance effect is different from the behavior predicted by traditional theories, which usually expect the resistivity to saturate or increase in other nonlinear ways.
Specifically, this research aims to:
1. **Understand the origin of linear magnetoresistance**: Why does the resistivity of these materials show a linear increase under a high magnetic field, instead of saturating like most materials?
2. **Verify model assumptions**: By constructing an idealized two - dimensional disordered semiconductor model, explore whether exact linear magnetoresistance can be obtained when the two components have equal area fractions and opposite carrier signs.
3. **Explain experimental phenomena**: Try to compare the results of the theoretical model with the experimental observation results, especially those materials that show significant linear magnetoresistance under a high magnetic field.
### Main research content
The paper proposes an idealized two - dimensional disordered semiconductor model, which consists of two different types of conductive regions A and B, and the conductivity tensor of each region follows the behavior of Drude metals in a perpendicular magnetic field. Key assumptions include:
- When the area fractions of the two components are equal (i.e., \(p_A = 1/2\)) and the carrier signs are opposite, it is proved by the duality theorem that the magnetoresistance is strictly linear under a sufficiently strong magnetic field.
- For other area fractions \(p_A\neq1/2\), the resistivity is calculated using the effective medium approximation (EMA), and it is found that the magnetoresistance tends to saturate at this time.
- The model also considers cases with different carrier signs and mobilities, and it is found that under certain conditions, the magnetoresistance can still remain linear.
### Key formulas
- **Conductivity tensor**:
\[
\sigma_{A,xx}=\sigma_{A,yy}=\frac{\sigma_{A,0}}{1 + H^2},\quad\sigma_{A,xy}=-\sigma_{A,yx}=\frac{\sigma_{A,0}H}{1 + H^2}
\]
\[
\sigma_{B,xx}=\sigma_{B,yy}=\frac{\sigma_{B,0}}{1 + k^2H^2},\quad\sigma_{B,xy}=-\sigma_{B,yx}=\frac{\sigma_{B,0}kH}{1 + k^2H^2}
\]
- **Duality theorem**:
\[
\sigma_e[\sigma(x)]\cdot\sigma_e[\sigma^{-1}(x)] = I
\]
- **Effective conductivity tensor**:
\[
\sigma_e[\sigma(x)]=\frac{1}{\sqrt{1 + H^2}}\sigma_0I
\]
- **Resistivity tensor**:
\[
\rho_e=\frac{\sigma_0}{\sqrt{1 + H^2}}I
\]
### Conclusion
This research successfully explains the linear magnetoresistance phenomenon in macroscopically disordered conductors under specific conditions (such as opposite carrier signs and equal area fractions) through a theoretical model. These results are consistent with experimental observations and provide a theoretical basis for understanding the unique properties of such materials. In addition, this model can also be applied to three - dimensional columnar microstructure systems, further expanding its scope of application.