High‐Efficiency Silicon Nanowire Array Near Infrared Photodetectors via Length Control and SiOx Surface Passivation

Bongkwon Son,Sang‐Ho Shin,Zhi‐Jun Zhao,Byeong‐Kwon Ju,Jun‐Ho Jeong,Munho Kim,Chuan Seng Tan
DOI: https://doi.org/10.1002/admt.202300131
IF: 6.8
2023-06-08
Advanced Materials Technologies
Abstract:Silicon nanowire heights are optimized for high‐efficiency near infrared photodetectors. A 6 in. scale uniform silicon nanowire array is fabricated by the transfer of metal catalyst layers and subsequent metal‐assisted chemical etching. Responsivity is further enhanced by surface passivation via silicon oxide layers. This work provides an excellent alternative route to realize near infrared silicon photodetectors. Silicon (Si) nanowire (NW) array is a promising light‐trapping platform due to the strong interaction between light and nanostructure. A photodetector benefits from the improved optical absorption in the Si NW array. Although the optical absorption increases with the NW length, the large NW length is not always preferable owing to the large surface area. Here, the systematic study on the Si NW array photodetectors with varied NW lengths is investigated. It is revealed that the photodetectors with 1 μm length provide a highest responsivity of 0.65 A W−1 and a specific detectivity of 1.40 × 109 cm Hz1/2 W−1 at the wavelength of 1000 nm, including the dark current of 54 μA at 1 V. In addition, the silicon oxide (SiOx) surface passivation is introduced to induce the high photogain. As a result, the responsivity is improved by 13 times (0.55 A W−1) at 1100 nm. This work proposes high‐efficiency Si NW array photodetectors by the NW array length control and the SiOx surface passivation.
materials science, multidisciplinary
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