Abstract:The rapid development of optical technologies and applications revealed the critical role of point defects affecting device performance. One of the powerful tools to study influence of defects on charge capture and recombination processes is thermoluminescence. The popular models behind thermoluminescence and carrier capture processes are semi-classic though. They offer good qualitative description, but implicitly exclude quantum nature of the accompanying parameters, such as frequency factors and capture cross sections. As a consequence, results obtained for a specific host material cannot be successfully extrapolated to other materials. Thus, the main purpose of our work is to introduce a reliable analytical model that describes non-radiative capture and release of electrons from/to the conduction band (CB). The proposed model is governed by Bose-Einstein statistics (for phonon occupation) and Fermi's golden rule (for resonant charge transfer between the trap and the CB). The constructed model offers a physical interpretation of the capture coefficients and frequency factors, and seamlessly includes the Coulomb neutral/attractive nature of traps. It connects the frequency factor to the overlap of wavefunctions of the delocalized CB and trap states, and suggests a strong dependence on the density of charge distribution, i.e. the ionicity/covalency of the chemical bonds within the host. Separation of the resonance condition from the accumulation/dissipation of phonons on the site leads to the conclusion that the capture cross-section does not necessarily depend on the trap depth. The model is verified by comparison to reported experimental data, showing good agreement. As such, the model generates reliable information about trap states whose exact nature is not completely understood and allows to do materials research in a more systematic way.

Calculation and properties of trap structural functions for various spatially correlated systems

Topology-dependent thermoluminescence kinetics

A quantum model of charge capture and release onto/from deep traps

Revealing trap depth distributions in persistent phosphors with a thermal barrier for charging

Non-empirical peak shape methods based on the physical model of the one trap one recombination center model

Calculation of reaction constants using Transition Path Sampling with a local Lyapunov bias

Radiation trapping in 1D using the Markov chain formalism: A computational physics project

A Gross-Pitaevskii-equation description of the momentum-state lattice: roles of the trap and many-body interactions

Fluctuation-dissipation relations in trap models

Statistical Approach to Tunneling Time in Attosecond Experiments

A New Method for Direct Determination of Trap Level Distribution from TSC Measurement

Thermodynamics Of Interacting Fermions In Atomic Traps

Generalized von Smoluchowski model of reaction rates, with reacting particles and a mobile trap

Trap Identification in Molecular Charge Transport Networks

Critical parameters from trap-size scaling in trapped particle systems

Resolving structural transitions in spherical dust clusters

Static and Dynamic Properties of Two Dimensional Coulomb Clusters

Trap Depth Distribution Determines Afterglow Kinetics: A Local Model Applied to ZnGa 2 O 4 :Cr 3

Trap Energy Distribution in Polymeric Insulating Materials Through Surface Potential Decay Method

Two-Dimensional Binary Clusters In A Hard-Wall Trap: Structural And Spectral Properties

Estimation of Trap Distribution by the Temperature Spectrum of Space Charge Decay