Z. Yang,M. Chshiev,M. Zwolak,Y.-C. Chen,M. Di Ventra
Abstract:We investigate the role of local heating and forces on ions in the stability of current-carrying aluminum wires. We find that heating increases with wire length due to a red shift of the frequency spectrum. Nevertheless, the local temperature of the wire is relatively low for a wide range of biases provided good thermal contact exists between the wire and the bulk electrodes. On the contrary, current-induced forces increase substantially as a function of bias and reach bond-breaking values at about 1 V. These results suggest that local heating promotes low-bias instabilities if dissipation into the bulk electrodes is not efficient, while current-induced forces are mainly responsible for the wire break-up at large biases. We compare these results to experimental observations.
What problem does this paper attempt to address?
The problems that this paper attempts to solve are: **To explore the influence of local heating and current - induced forces on the stability of aluminum atomic wires under different bias voltages**. Specifically, the authors studied the following two main problems:
1. **The influence of local heating**:
- When an electric current passes through an aluminum atomic wire, the interaction between electrons and lattice vibration modes will lead to local heating.
- Whether local heating will cause structural instability due to the inability of heat to be effectively conducted to the electrodes, especially under low bias voltages.
2. **The influence of current - induced forces**:
- When the current passes through the atomic wire, it will exert forces on the ions (i.e., current - induced forces). Will these forces increase with the increase of bias voltage and eventually lead to bond breakage?
- Under high bias voltages, whether the current - induced force is the main cause of atomic wire breakage.
### Research background
Atomic wires are an ideal platform for studying transport properties at the nanoscale. Previous studies have shown that in some materials, the probability of single - atom contact decreases with the increase of bias voltage and disappears at a critical bias voltage of about 1 V. In addition, some samples show instability under low bias voltages (usually 100 mV or lower), resulting in atomic wire breakage. These phenomena suggest that we need to further understand the roles of local heating and current - induced forces in these processes.
### Main findings
- **Local heating**:
- If there is a good thermal contact between the atomic wire and the electrodes, the local temperature is relatively low within a wide range of bias voltages.
- If the thermal contact is poor, local heating will become significant at very low bias voltages, which may lead to structural instability.
- As the length of the atomic wire increases, the frequency spectrum undergoes a redshift, resulting in a higher local temperature for longer atomic wires at the same bias voltage.
- **Current - induced forces**:
- The current - induced force increases significantly with the increase of bias voltage and reaches the bond - breaking value at about 1 V.
- For shorter atomic wires (such as 1 - Al and 2 - Al), the current - induced force makes the atoms move against the direction of electron flow at any bias voltage and increases linearly with voltage.
- For longer atomic wires (such as 3 - Al and 4 - Al), the current - induced force is nonlinear at small voltages, with some atoms moving along the current direction and some atoms moving against the current direction.
### Conclusion
This study shows that local heating and current - induced forces have different influences on the stability of atomic wires in different bias voltage ranges:
- **Under low bias voltages**: If heat dissipation is not sufficient, local heating is the main cause of structural instability.
- **Under high bias voltages**: The current - induced force is the main cause of atomic wire breakage.
These results are helpful for revealing important physical mechanisms in nano - scale electronic devices and are of great significance for the design and optimization of nano - electronic devices.
### Formula summary
1. **Current - induced force formula**:
\[
F = -\sum_i \langle \psi_i | \frac{\partial v}{\partial R} | \psi_i \rangle - \lim_{\Delta \to 0} \int dE \langle \psi_\Delta | \frac{\partial v}{\partial R} | \psi_\Delta \rangle
\]
where \( v \) is the electron - ion interaction.
2. **Local heating power formula**:
\[
P = \sum_{\nu \in \text{vib}} (W_{R,2}^\nu + W_{L,2}^\nu - W_{R,1}^\nu - W_{L,1}^\nu)
\]
where \( W_{L(R),1(2)}^\nu \) represents the energy absorbed (emitted) by electrons incident from the left (right) electrode through the vibration mode \( \nu \).
3. **Thermal flow formula for elastic phonon scattering**:
\[
I_{th} = \frac{4\pi K^2}{\hbar} \int d\epsilon \epsilon N_L(\epsilon) N_R(\epsilon) [n_L(\epsilon)