Evolution of excitons via biexcitons to an electron-hole plasma without level crossing between band edge and exciton in a quantum wire

Masahiro Yoshita,Yuhei Hayamizu,Hidefumi Akiyama,Loren N. Pfeiffer,Ken W. West,Kenichi Asano,Tetsuo Ogawa
DOI: https://doi.org/10.48550/arXiv.cond-mat/0402526
2005-03-14
Abstract:A recent single quantum wire is of sufficient quality to reveal new details of the photoluminescence (PL) evolution with increasing electron--hole (e--h) pair density. At a pair density of 3.6 $\times$ 10$^{3}$ cm$^{-1}$, the PL is characteristic of biexcitons shifted below the exciton peak by the 2.8-meV biexciton binding. At the pair density of 1.2 $\times$ 10$^{5}$ cm$^{-1}$, the biexciton peak broadens without energy shift to an e--h plasma. At all pair densities up to 30 K, neither the exciton peak nor the one-dimensional (1D) continuum edge shows any shift. In contrast to prevailing theories, the low-energy edge of the plasma PL line never crosses the exciton peak and never makes contact with the 1D e--h continuum.
Mesoscale and Nanoscale Physics,Materials Science
What problem does this paper attempt to address?
The problem that this paper attempts to solve is: **In the transition process from excitons to electron - hole plasma in one - dimensional quantum wires, will the energy - level crossing phenomenon occur?** Specifically, the author explored the changes in the photoluminescence (PL) spectrum during the process of increasing the electron - hole pair density, especially the evolution among the exciton, biexciton and plasma states. ### Main problem background 1. **Traditional theoretical expectations**: - According to the traditional Mott transition theory, in two - dimensional or three - dimensional systems, as the carrier density increases, the exciton binding energy gradually decreases, and at the same time, the band - edge energy redshifts due to band - gap renormalization (BGR). When the exciton binding energy is equal to the band - edge energy, the Mott transition occurs and an electron - hole plasma is formed. - However, in one - dimensional systems, it has been experimentally observed that the PL peak position hardly changes with the carrier density, which is inconsistent with the traditional theory. 2. **Research motivation**: - In order to verify whether there is a Mott transition from excitons to plasma in one - dimensional systems and to explore whether there is an energy - level crossing phenomenon during this transition process. - Of particular concern is whether the plasma PL peak on the low - energy side will cross the exciton peak and come into contact with the one - dimensional electron - hole continuum. ### Experimental design and results - **Sample**: A high - quality single T - shaped quantum wire (T wire) was used, which was prepared by the cleaved - edge overgrowth method and had minimized inhomogeneous broadening. - **Experimental method**: By changing the excitation power, the changes in the PL spectra at different carrier densities were studied. - **Main findings**: - At a lower carrier density ($3.6\times 10^{3}\, \text{cm}^{-1}$), the PL peak corresponded to biexcitons and was 2.8 meV below the exciton peak. - As the carrier density increased to $1.2\times 10^{5}\, \text{cm}^{-1}$, the biexciton peak gradually broadened and transformed into an electron - hole plasma, but its peak energy hardly changed. - Even at high carrier densities, the band - edge energy never crossed the exciton peak nor came into contact with the one - dimensional electron - hole continuum. - This indicates that in one - dimensional systems, the transition from excitons to plasma is a gradual process rather than an abrupt Mott transition. ### Conclusion This study shows that in one - dimensional quantum wires, the transition from excitons to electron - hole plasma is a gradual transition process, which is achieved through the biexciton stage. During this process, no crossing phenomenon between the band - edge and exciton energy levels was observed, which is inconsistent with the traditional Mott transition theory. Therefore, a new theoretical framework is required to explain this special transition mechanism. ### Formula summary - Exciton binding energy: $E_{\text{binding}} = 2.8\, \text{meV}$ - Carrier density range: from $3.6\times 10^{3}\, \text{cm}^{-1}$ to $1.2\times 10^{6}\, \text{cm}^{-1}$ - Relationship between band - edge energy and exciton energy: no energy - level crossing occurred These findings provide a new perspective for understanding the many - body effects in low - dimensional systems and point out the limitations of existing theories.