Strongly Non-Arrhenius Self-Interstitial Diffusion in Vanadium

Luis A. Zepeda-Ruiz,Joerg Rottler,Seungwu Han,Graeme J. Ackland,Roberto Car,David J. Srolovitz
DOI: https://doi.org/10.1103/PhysRevB.70.060102
2004-01-27
Abstract:We study diffusion of self-interstitial atoms (SIAs) in vanadium via molecular dynamics simulations. The <111>-split interstitials are observed to diffuse one-dimensionally at low temperature, but rotate into other <111> directions as the temperature is increased. The SIA diffusion is highly non-Arrhenius. At T<600 K, this behavior arises from temperature-dependent correlations. At T>600 K, the Arrhenius expression for thermally activated diffusion breaks down when the migration barriers become small compared to the thermal energy. This leads to Arrhenius diffusion kinetics at low T and diffusivity proportional to temperature at high T.
Materials Science
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