Electron transfer driving force as the criterion for efficient n-doping of organic semiconductors with DMBI-H derivatives

Chunlin Xu,Dong Wang
DOI: https://doi.org/10.1039/d3ta02943c
IF: 11.9
2023-07-03
Journal of Materials Chemistry A
Abstract:Restricted by the low doping efficiency, the conductivity of n-type organic semiconductors (OSCs) lags far behind their p-type counterparts. DMBI-H derivatives are the most widely applied n-dopants, and the hydride transfer (HYT) to OSCs has been recognized as the most possible rate-determining step in the n-doping reaction. However, relations of the doping efficiency to molecular properties of OSCs and dopants remain unclear. Here, by calculating the thermodynamics and kinetics of doping reactions between eight DMBI-H derivatives and 52 OSCs using the density functional theory method, the electron affinity (EA) of OSCs and the ionization energy (IE) of dopant radicals (D ̇s) are identified as molecular descriptors of the n-doping reaction. The EA(OSC) − IE(D ̇) > 1.0 eV criterion is proposed to assess the doping efficiency of these DMBI-H derivatives. The hydrogen release and possible side-products are also discussed in relation to the backbone structure of OSCs. Finally, these concepts are proved using four newly designed n-type polymers with EAs > 4.0 eV. The descriptors and criterion not only can be used to predict viable n-dopants and doping conditions for known OSCs, but also provide a rule of thumb for the molecular design of new OSCs and dopants.
materials science, multidisciplinary,chemistry, physical,energy & fuels
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