Intermediate phases of the two dimensional electron fluid between the Fermi liquid and the Wigner crystal

B. Spivak,S. Kivelson

DOI: https://doi.org/10.48550/arXiv.cond-mat/0310712

2004-04-20

Abstract:We show that there can be no direct first order transition between a Fermi liquid and an insulating electronic (Wigner) crystalline phase in a clean two-dimensional electron gas in a metal-oxide-semiconductor field-effect transistor (MOSFET); rather, there must always exist intermediate ``micro-emulsion'' phases, and an accompanying sequence of continuous phase transitions. Among the intermediate phases which we find are a variety of electronic liquid crystalline phases, including stripe-related analogues of classical smectics and nematics. The existence of these phases can be established in the neighborhood of the phase boundaries on the basis of an {\it asymptotically exact} analysis, and reasonable estimates can be made concerning the ranges of electron densities and device geometries in which they exist. They can occur in clean Si MOSFETs in the range of densities in which an ``apparent metal to insulator transition'' has been observed in existing experiments. We also point out that, in analogy with the Pomaranchuk effect in $^3$He, the Wigner crystalline phase has higher spin entropy than the liquid phase, leading to an increasing tendency to crystallization with increasing temperature.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

### The problems the paper attempts to solve

This paper aims to explore the transition mechanism between the Fermi - liquid phase and the insulating Wigner - crystal phase of two - dimensional electron gas (2DEG) in metal - oxide - semiconductor field - effect transistors (MOSFETs). Specifically, the author attempts to prove that in a clean two - dimensional electron system, a first - order phase transition cannot occur directly between the Fermi - liquid and the Wigner - crystal, but there must be an intermediate "microemulsion" phase, accompanied by a continuous sequence of phase transitions.

#### Key issues:

1. **Impossibility of direct first - order phase transition**:
- The author points out that in a clean two - dimensional electron gas, a first - order phase transition cannot occur directly between the Fermi - liquid and the Wigner - crystal. This is because under long - range dipole - dipole interactions, macroscopic phase separation will lead to a decrease in the free energy of the system, thus prohibiting the first - order phase transition.

2. **Existence of the intermediate phase**:
- Research shows that there must be some intermediate phases, which are called "microemulsion" phases. These intermediate phases include various electron - liquid - crystal phases, such as the stripe - related classical - like nematic phase and the smectic phase.

3. **Microscopic mechanism and thermodynamic behavior**:
- The author analyzes in detail the formation mechanism of these intermediate phases and discusses their existence ranges under different electron densities and device geometries. In addition, they also point out a phenomenon similar to the Pomeranchuk effect in 3He, that is, the spin entropy of the Wigner - crystal phase is higher than that of the liquid phase, resulting in an increased tendency to crystallize as the temperature rises.

4. **Explanation of experimental phenomena**:
- These intermediate phases may appear in the density range where an "apparent metal - to - insulator transition" is observed in clean Si MOSFETs, providing a theoretical explanation for the existing experimental results.

#### Formula representation:

- The critical parameter \( r_s \) for the Wigner - crystal phase transition is defined as:
\[
r_s=\left(\pi n a_B^2\right)^{- 1/2}
\]
where \( n \) is the electron density and \( a_B \) is the effective Bohr radius.

- The potential energy expression for dipole - dipole interactions is:
\[
V(r)\sim\frac{4e^2d^2}{\epsilon r^3}
\]
where \( d \) is the distance to the gate and \(\epsilon\) is the dielectric constant of the semiconductor.

- The contribution of surface tension to the free energy:
\[
F_\sigma=\int ds\,\sigma_0(\hat{\theta})-\frac{\sigma_1}{2}\int dl\cdot dl'\frac{1}{\sqrt{|l - l'|^2 + d^2}}
\]
where \(\sigma_0(\hat{\theta})\) is the short - range surface tension, \(\sigma_1=\frac{2e^2(\Delta n)^2d^2}{\epsilon}\), and \(\Delta n\) is the density difference between the coexisting phases.

Through these analyses, the author reveals the nature of the complex phase - transition behavior in two - dimensional electron gas and proposes a new theoretical framework to understand this phenomenon.