Radiation induced zero-resistance states in GaAs/AlGaAs heterostructures: Voltage-current characteristics and intensity dependence at the resistance minima

R. G. Mani,V. Narayanamurti,K. von Klitzing,J. H. Smet,W. B. Johnson,V. Umansky
DOI: https://doi.org/10.1103/PhysRevB.70.155310
2004-11-01
Abstract:High mobility two-dimensional electron systems exhibit vanishing resistance over broad magnetic field intervals upon excitation with microwaves, with a characteristic reduction of the resistance with increasing radiation intensity at the resistance minima. Here, we report experimental results examining the voltage - current characteristics, and the resistance at the minima vs. the microwave power. The findings indicate that a non-linear V-I curve in the absence of microwave excitation becomes linearized under irradiation, unlike expectations, and they suggest a similarity between the roles of the radiation intensity and the inverse temperature.
Mesoscale and Nanoscale Physics
What problem does this paper attempt to address?