Abstract:Since binary rare earth chalcogenides exhibit diverse and interesting physical properties, they have been vigorously studied about their composition and crystal structure. For example, the rare earth sulfides ?-R2S3 (R = Tb, Dy) with tetragonal crystal structure exhibit peculiar successive antiferromagnetic transitions. The rare earth tellurides RTe3 (R = Gd, Tb, Dy) with layered structure exhibit charge density wave (CDW) transition and superconducting transition under pressure. In the writer research on a series of rare earth chalcogenides, the magnetocaloric effect (MCE) of ?-R2S3 (R = Tb, Dy) and the physical properties of GdTe3 in high magnetic field and low temperature region were investigated in advance. In addition to such attractive physical properties of rare earth compounds, many characteristic physical properties have also been reported for rare earth compounds including transition metals. In these transition-metal rare earth compounds, there still exist no-studied areas and it is a possible that unknown substances may be hidden, which exhibit novel physical properties leading to materials useful for the next generation society. So in this study, we aimed to search for new rare earth chalcogenides including transition metal. As a result, I discovered new transition-metal rare earth chalcogenides R10NiTe9 (R = Gd, Tb) and investigated their magnetic and electrical properties in detail. Single crystals of R10NiTe9 were grown by heat treatment of a mixture of R, R3Ni and R2Te3. SEM-EDX analysis confirmed that the ratio of R, Ni and Te was about 10: 1: 9. XRD analysis revealed that the obtained single crystal was NaCl-type structure with space group Fm-3m at room temperature. It was concluded that in this structure Ni was randomly substituted Te in a ratio of 1 per 10. In terms of magnetism, the following points have been clarified. (A) In the case of Gd10NiTe9, (1) it exhibits a ferromagnetic transition at 168 K. It implies that I succeeded in emerging ferromagnetism at high temperature by slightly incorporating Ni into GdTe having an antiferromagnetism at a lower temperature. (2) In the magnetization process at low temperature, it has been found that there is a region where the magnetization decreases with increasing the magnetic field. It was also concluded to be cooperative phenomenon between the rare earth element Gd and the transition metal element Ni. (B) For Tb10NiTe9, (1) Two peaks suggesting successive magnetic transitions were found below 120 K in the temperature dependence of magnetization. (2) A remarkable FC / ZFC effect was found below a temperature at which the high temperature side magnetic transition occurs. As for electrical conductivity, the followings were clarified. In both compounds Gd10NiTe9 and Tb10NiTe9, (1) electrical resistivity is about 104 times greater than conventional metal at room temperature. (2) Temperature dependence of electrical resistivity is extremely weak, and the value of electric resistivity hardly changes down to about 50 K. (3) Temperature dependence of electrical resistivity shows a sharp rise below about 50 K. As mentioned above, single crystals of Gd10NiTe9 and Tb10NiTe9 were successfully grown, as new rare earth chalcogenides including Ni, and exhibited novel physical properties on magnetism and electrical conductivity. This result seems to open up a new way to study deepened physical properties of the present compounds, research on physical properties in new compound group R10NiTe9 and develop new materials.

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