Gating of a molecular transistor: Electrostatic and Conformational

Avik W. Ghosh,Titash Rakshit,Supriyo Datta

DOI: https://doi.org/10.48550/arXiv.cond-mat/0212166

2004-03-11

Abstract:We derive a general result that can be used to evaluate and compare the transconductance of different field-effect mechanisms in molecular transistors, both electrostatic and conformational. The electrostatic component leads to the well-known thermal limit in the absence of tunneling. We show that in a standard three-terminal geometry and in the absence of strong electron-phonon coupling, the conformational component can lead to significant advantages only if the molecular dipole moment \mu is comparable to et_ox, t_ox being the thickness of the oxide. Surprisingly this conclusion is independent of the ``softness'' of the conformational modes involved, or other geometrical factors. Detailed numerical results for specific examples are presented in support of the analytical results.

Mesoscale and Nanoscale Physics