Nanometer-Scale Metallic Grains Connected with Atomic-Scale Conductors

A. Anaya,A. L. Korotkov,M. Bowman,J. Waddell,D. Davidovic
DOI: https://doi.org/10.1063/1.1554756
2002-10-29
Abstract:We describe a technique for connecting a nanometer-scale gold grain to leads by atomic-scale gold point contacts. These devices differ from previous metallic quantum dots in that the conducting channels are relatively well-transmitting. We investigate the dependence of the Coulomb blockade on contact resistance. The high-resistance devices display Coulomb blockade and the low-resistance devices display a zero-bias conductance dip, both in quantitative agreement with theory. We find that in the intermediate regime, where the sample resistance is close to $h/e^2$, the I-V curve displays a Coulomb staircase with symmetric contact capacitances.
Mesoscale and Nanoscale Physics,Materials Science
What problem does this paper attempt to address?
The problem that this paper attempts to solve is: how to connect nano - scale metal particles to electrodes through atomic - scale contacts, and study the Coulomb blockade effect in this structure and its relationship with contact resistance. Specifically, the authors have developed a technique that can connect a single gold particle through atomic - scale contacts between the source and the drain, thus forming a new type of nano - device. These devices are different from previous metal quantum dots because their conduction channels are relatively transparent (i.e., with lower resistance). ### Main problems and research background 1. **Fabrication of nano - scale devices** - The fabrication of nano - scale devices has become a research hotspot in recent years. At low temperatures, discrete electron energy levels can be distinguished in nano - scale metal devices. - Previous studies have mainly focused on atomic contacts and nano - particles, and these studies have revealed new phenomena in quantum transport. 2. **Coulomb blockade effect** - Coulomb blockade is a quantum effect that occurs in nano - scale systems due to Coulomb interactions, manifested as a significant decrease in conductivity near zero bias voltage. - The paper explores the relationship between the Coulomb blockade effect and contact resistance, especially the behavior in the intermediate resistance region (close to the resistance quantum \( R_Q=\frac{h}{e^2}\)). 3. **New device characteristics** - The new device exhibits the dual characteristics of atomic contacts and metal particles. In particular, the contact conductance can change in discrete steps, similar to the change of the conductance quantum \( G_0 = \frac{2e^2}{h}\). - These characteristics make the new device exhibit different Coulomb blockade behaviors in different resistance states. ### Experimental methods and techniques - **Deposition process**: By depositing a high - purity gold film on an insulating substrate and using a strong electric field to induce surface migration to create nano - scale contacts. - **Electrical measurement**: By monitoring the current change during the deposition process, adjust the voltage and resistance parameters to obtain different types of contacts (such as metal contacts, tunnel junctions, etc.). - **Low - temperature measurement**: In order to observe the Coulomb blockade effect, the sample needs to be cooled to millikelvin temperatures and perform fine electrical measurements. ### Main findings - **Dependence of Coulomb blockade**: The study found that in the high - resistance state, the device exhibits a typical Coulomb blockade effect; while in the low - resistance state, the device exhibits a phenomenon of zero - bias conductivity decrease. - **Behavior in the intermediate resistance region**: In the intermediate resistance region (close to \( h/e^2\)), the I - V curve shows a Coulomb staircase, and the contact capacitance is symmetric. - **Symmetry of effective capacitance**: In the experiment, it was found that under low - temperature and low - bias conditions, the effective capacitance \( C_{\text{eff}}\) exhibits symmetry in many samples, which is inconsistent with theoretical expectations, suggesting that there may be new physical mechanisms at work. In summary, this paper aims to explore the new device characteristics of the combination of nano - scale metal particles and atomic - scale contacts, and deeply study its Coulomb blockade effect, providing an important basis for further understanding nano - scale quantum transport.