P. C. T. Dajello,I. Mozolevski,Z. G. S. Kipervaser
Abstract:Heterogeneous nucleation on catalytic surfaces plunged into a fluid is described through a stochastic model. To generate this non-equilibrium process we assume that the turn on of a electrostatic potential triggers a complex dynamics that includes a free Brownian motion, a reaction kinetic and a stimulated migration before the final adhesion of ions on the surface (electrode). At, when the potential is switched on, the spatial symmetry is broken and a two-stage process is developed. First the ion undergoes a change in its electrochemical character (at some region of the space) and then reacts at some specific points to stick together on the surface. The continuous addition of ions develops a material deposit connected to the current transient signals measured in electrochemical deposition processes. Unlike current models found in the literature, this procedure avoids the computation of the area covered by the diffusion zones, allowing a formalism skill to describe equally well the absorption of ions by channels on electrified surfaces. The theory is applied to the electrodeposition of nickel on n-silicon and explains the failure of standard three-dimensional nucleation models to reproduce situations where interfacial relations control the dynamics. It is shown that, processes dominated by chemical reactions on the electrode can not be classified as possessing an exclusively instantaneous or progressive character, rather, they mix together these two limiting forms of nuclei activation to defines the current transients in its beginning.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is: **How to describe and understand the heterogeneous nucleation phenomenon controlled by chemical reactions during the electrochemical deposition process, especially when the traditional three - dimensional nucleation model cannot accurately reproduce the interface - relationship - controlled kinetics**.
### Specific Problem Background
1. **Limitations of Traditional Models**:
- Traditional models (such as the Sharifker - Hills model) mainly focus on diffusion - controlled processes and assume that nucleation and growth are mainly determined by diffusion behavior. However, these models perform poorly when dealing with material deposition on semiconductor electrodes, especially when the interface reaction rate has a significant impact.
- Experimental results show that many material depositions exhibit roughness and the time evolution is not always smooth, indicating that diffusion is not the only controlling factor.
2. **Complexity of Chemical - Reaction - Controlled Processes**:
- In some cases, the chemical reaction rate can become very slow and become the dominant process. This means that mass transport (diffusion) may be affected by electric fields or chemical effects, leading to convective motion and selective reactions.
- These complex kinetic processes make it difficult for traditional diffusion - controlled models to accurately describe experimental results, especially in the early stages of current transient signals.
### Research Objectives
The goal of this paper is to develop a new theoretical framework that can better describe the electrochemical deposition process controlled by chemical reactions. Specifically:
- **Avoid calculating the effective reaction area in the diffusion region**, thereby simplifying the model and improving its applicability.
- **Introduce a two - stage model** to describe the process of ions migrating from the solution to the electrode surface, including Brownian motion, changes in electrochemical properties, migration, and final adsorption.
- **Explain the electrodeposition phenomenon of nickel on n - type silicon electrodes** and show why the standard three - dimensional nucleation model cannot reproduce the behavior observed in this case.
- **Prove that in the deposition process controlled by chemical reactions, the nucleation activation mechanism is not a simple instantaneous or progressive form, but a mixture of these two forms**.
### Key Formulas
1. **Current Density Formula**:
\[
I = j_{R}^{th}(r, t)\cdot p_{r,t}^{\prime}(r, t)
\]
where:
- \( I \) is the measured current density.
- \( j_{R}^{th}(r, t) \) is the ion flux through the first reaction hemisphere.
- \( p_{r,t}^{\prime}(r, t) \) is the probability that ions reach the nucleus and are reduced in region II.
2. **Probability Density Equation**:
\[
\frac{\partial}{\partial t}p(r, t)=D\left(\frac{\partial^{2}}{\partial r^{2}}+\frac{2}{r}\frac{\partial}{\partial r}\right)p(r, t)
\]
where \( D \) is the diffusion coefficient of ions.
3. **Boundary Conditions**:
\[
Kp(R, t)=D\left.\frac{\partial p(r, t)}{\partial r}\right|_{r = R}
\]
4. **Reaction Rate Formula**:
\[
\frac{db}{dt}=kn a
\]
where \( k \) is the reaction rate constant, \( n \) is the nuclear density per unit volume, and \( a \) is the concentration of A particles.
5. **Final Current Density Formula**:
\[
I = CR^{2}D\left[\text{erfc}\left(\gamma\sqrt{\frac{t}{D}}\right)+\frac{e^{-\gamma^{2}\frac{t}{D}}}{\sqrt{\pi\frac{t}{D}}}\right]\exp\left(-\frac{kt}{2}-\alpha\right)