A. Nauen,I. Hapke-Wurst,F. Hohls,U. Zeitler,R. J. Haug,K. Pierz
Abstract:We investigate the noise properties of a GaAs-AlAs-GaAs tunneling structure with embedded self-assembled InAs quantum dots in the single-electron tunneling regime. We analyze the dependence of the relative noise amplitude of the shot noise on bias voltage. We observe a non-monotonic behaviour of the Fano-factor $\alpha$ with an average value of $\alpha \approx 0.8$ consistent with the asymmetry of the tunneling barriers. Reproducible fluctuations observed in $\alpha$ can be attributed to the successive participation of more and more InAs quantum dots in the tunneling current.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to study the ballistic noise characteristics in self - assembled InAs quantum dot (QD) systems, especially the change in relative noise amplitude in the single - electron tunneling regime. Specifically, the authors focus on how the shot noise generated by the tunneling current through these quantum dots changes under different bias voltages and try to explain the observed phenomena.
### Main problems:
1. **Shot noise characteristics**: Study the noise characteristics of self - assembled InAs quantum dots embedded in GaAs - AlAs - GaAs tunneling structures in the single - electron tunneling regime.
2. **Fano factor behavior**: Analyze the relationship between the relative amplitude of shot noise (represented by the Fano factor α) and the bias voltage, especially the observed non - monotonic behavior and its causes.
3. **Multi - quantum - dot transport mechanism**: Explore the change in shot noise characteristics when multiple quantum dots participate in the transport current as the bias voltage is increased.
### Research background:
- **Shot noise**: In an ideal tunneling barrier, due to the Poisson statistical characteristics of independent tunneling events, a frequency - independent current noise spectrum, that is, full shot noise, will be generated.
- **Negative correlation effect**: The introduction of additional negative correlation sources such as the Pauli exclusion principle will lead to a reduction in the shot noise amplitude.
- **Theoretical model**: For pure coherent transport and classical sequential tunneling, the theoretical model predicts the noise suppression phenomenon, and this suppression is usually not affected by dephasing.
### Experimental findings:
- **Fano factor modulation**: In the experiment, it is observed that the Fano factor α is modulated with the change of the bias voltage VSD, and the average value is about 0.8, which is consistent with the asymmetry of the tunneling barrier.
- **Non - monotonic behavior**: In some bias voltage ranges, the Fano factor exhibits non - monotonic behavior, which is attributed to more InAs quantum dots gradually participating in the tunneling current.
- **Multi - quantum - dot effect**: When the bias voltage is increased to more than 130 mV, multiple quantum - dot states begin to contribute to the current, resulting in a non - monotonic change in the Fano factor, but still maintaining sub - Poisson noise (α < 1) overall.
### Key formulas:
- Definition of Fano factor:
\[
\alpha=\frac{S}{S_{\text{poisson}}}=\frac{\Gamma_L^2+\Gamma_R^2}{(\Gamma_L+\Gamma_R)^2}
\]
where \(\Gamma_L\) and \(\Gamma_R\) are the partial attenuation widths of the left and right barriers respectively.
- Transmission coefficient formula:
\[
T(E)=\frac{1}{1+(1+(\frac{1}{4}(\frac{\kappa}{k}-\frac{k}{\kappa})^2))\sinh^2(\kappa a)}
\]
where \(\kappa = \sqrt{\frac{2m^*(V_0 - E)}{\hbar^2}}\), \(k=\sqrt{\frac{2m^*E}{\hbar^2}}\), \(a\) is the barrier width, \(V_0\) is the barrier height, \(m^*\) is the effective electron mass, and \(E\) is the energy of the tunneling electron.
### Conclusion:
This study reveals the shot noise characteristics of self - assembled InAs quantum dots under different bias voltages, especially the non - monotonic change of the Fano factor with the bias voltage, providing important insights for understanding the tunneling transport mechanism in zero - dimensional systems.