Abstract:The substitution of chemically similar elements in a given crystal structure is an effective way to enhance physical properties, but the understanding on such improvements is usually impeded because the substitutions are random, and the roles of the different atoms cannot be distinguished by crystallographic symmetry. Herein, we provide a detailed crystallographic analysis and property measurements for the continuous solid solutions LuGexSn2–x (0 < x < 2). The results show that there is no apparent change of the global symmetry, with the end-members LuGe2 and LuSn2, as well as the intermediate LuGexSn2–x compositions adopting the ZrSi2 type structure (space group Cmcm, Pearson index oC12). Yet, the refinements of the crystal structures from single-crystal X-ray diffraction data show that Ge–Sn atom substitutions are not random, but occur preferentially at the zigzag chain. The patterned distribution of two group 14 elements leads to a significant variation in chemical bonding and charge ordering within the other structural fragment, the 2D square nets, thereby resulting in tuned electron transport. The enhancement is greater than that for the typical Bloch–Gruneisen model and more akin to that for the parallel-resistor model. Magnetization measurements on single crystals show bulk superconductivity in all LuGexSn2–x samples with shielding fractions as high as 90%. Specific heat data confirm the effect to originate from residual metallic tin in the material, indicating that Sn atom substitutions in the 2D square nets cause disruptions of the hypervalent bonding and local anisotropy, which ultimately leads to vanishing of the superconducting state in the end-member LuGe2. This work sheds light on how the complexity in chemical interactions by two different carbon congeners leads to changes in the physical properties and how they can be correlated with the induced charge distribution. These studies also provide a general approach to modulation of charge density and. thus, of emerging physical properties in other classes of intermetallic systems based on the main-group elements of groups 13 to 15.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acs.inorgchem.0c01062?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acs.inorgchem.0c01062</a>.Tables with crystallographic data for some other LuSn2–xGex (0 ≤ x ≤ 2) samples; a table with optimized structural parameters of LuSn2–xGex (x = 0.5, 1, 1.5) from the DFT calculations; a figure displaying powder XRD patterns of representative LuSn2–xGex samples, a figure showing the variation of Ge fraction in zigzag chains (red) and square nets against the Ge concentration in LuSn2–xGex (0 ≤ x ≤ 2) compounds; a figure showing the difference between two kinds of bonds in square nets (a) and their angles (b) in LuSn2–xGex (0 ≤ x ≤ 2) compounds; a figure showing the variation of atomic parameters against Ge concentration in LuSn2–xGex (0 ≤ x ≤ 2) compounds; a figure showing the temperature dependent electrical resistivity of the LuSn1.25Ge0.75 compound, fitted based on the Bloch–Gruneisen model; a figure showing the electron density and difference electron density maps projected on square nets of LuSn1.5Ge0.5; a figure showing the MEM electron density and difference electron density maps projected on (100) plane in both LuSn2 and LuGe2 with the corresponding maps from DFT calculations; and a figure showing the MEM electron density and difference electron density maps projected on square nets together with difference electron density map from DFT calculations in LuGe2 (<a class="ext-link" href="/doi/suppl/10.1021/acs.inorgchem.0c01062/suppl_file/ic0c01062_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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