Fractional Topological Excitations and Quantum Phase Transition in a Bilayer Two-Dimensional Electron Gas Adjacent to a Superconductor Film
Ningning Hao,Wei Zhang,Zhigang Wang,Yupeng Wang,Ping Zhang
DOI: https://doi.org/10.1103/physrevb.81.125301
IF: 3.7
2010-01-01
Physical Review B
Abstract:We study a bilayer two-dimension-electron-gas (2DEG) adjacent to a type-II superconductor thin film with a pinned vortex lattice. We find that with increasing interlayer tunneling, the system of half-filling presents three phases: gapped phase-I (topological insulator), gapless critical phase-II (metal), and gapped phase-III (band insulator). The total Hall conductance for phase-I/III is 2/0 e(2)/h, and has nonquantized values in phase-II. The excitation (response to topological defect, a local vortex defect) in these three phases shows different behaviors due to the topological property of the system, including fractional charge e/2 for each layer in phase-I. While in the case of quarter-filling, the system undergoes a quantum phase transition from metallic phase to topological insulator phase.